Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2 ¯ 01 $$ \overline{2}01 $$ ) Heterojunctions

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of investigating scaling properties of gate-stacks consisting atomic-layer deposited Al2O3/III-Nitride heterojunctions, we find interface charges that appear closely linked to the polarization charges of the unde...

Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3

Grain boundary structures of atomic layer deposited

Grain boundary plays an important role in determining the physical properties and chemical stability of the materials. In particular, the structures of grain boundaries in atomic layer deposited TiN film may be one of the main factors to dominate the reliability and performance of ULSI devices with multilayer structure of Cu-based interconnects. In this work, the characteristics of grain bounda...

Atomic layer deposited high-k nanolaminate capacitors

Al2O3–Ta2O5 nanolaminate films were prepared via atomic layer deposition (ALD) on silicon with a single overall composition and thickness, but with a varying number of Al2O3/Ta2O5 bilayers. The composition of the films was roughly 57% Al2O3 and 43% Ta2O5 and the total film thickness was held at 58 nm, while the number of bilayers was varied from 3 to 192 by changing the target bilayer thickness...

Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy

Pure aluminum oxide (Al2O3) and zinc aluminum oxide (Zn x Al1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al2O3/Zn0.8Al0.2O heterojunction were investigated in detail using char...